Absorbance-modulation optical lithography.

نویسندگان

  • Rajesh Menon
  • Henry I Smith
چکیده

We describe a new mode of optical lithography called absorbance-modulation optical lithography (AMOL) in which a thin film of photochromic material is placed on top of a conventional photoresist and illuminated simultaneously by a focal spot of wavelength lambda1 and a ring-shaped illumination of wavelength lambda2. The lambda1 radiation converts the photochromic material from an opaque to a transparent configuration, thereby enabling exposure of the photoresist, while the lambda2 radiation reverses the transformation. As a result of these competing effects, the point-spread function that exposes the resist is strongly compressed, resulting in higher photolithographic resolution and information density. We show by modeling that the point-spread-function compression achieved via AMOL depends only on the absorbance distribution in the photostationary state. In this respect, absorbance modulation represents an optical nonlinearity that depends on the intensity ratio of lambda1 and lambda2 and not on the absolute intensity of either one alone. By inserting material parameters into the model, a lithographic resolution corresponding to lambda1/13 is predicted.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Barrier-free absorbance modulation for super-resolution optical lithography.

Absorbance-Modulation-Optical Lithography (AMOL) enables super-resolution optical lithography by simultaneous illumination of a photochromic film by a bright spot at one wavelength, λ1 and a node at another wavelength, λ2. A deep subwavelength region of the transparent photochromic isomer is created in the vicinity of the node. Light at λ1 penetrates this region and exposes an underlying photor...

متن کامل

Immersion lithography with numerical apertures above 2.0 using high index optical materials

The progress of optical lithography has approached the sub-30 nm regime using 193nm excimer lasers as the exposure sources. To increase the numerical aperture (NA) further, many issues, especially those related to materials, need to be addressed. In this paper, we present the analytical and experimental results of oblique two-beam lithography with sapphire (Al2O3) as the optical material. At 19...

متن کامل

Fluoropolymers for 157nm Lithography: Optical Properties from VUV Ellipsometry and Absorbance Measurements

With the introduction of 157 nm as the next optical lithography wavelength, the need for new pellicle and photoresist materials optimized for this wavelength has produced much activity in optical characterization of thin film materials. Here we focus on ultratransparent fluoropolymers for 157 nm pellicle applications where absorbances below 0.01/μm are necessary to achieve transmissions above 9...

متن کامل

Fabrication and Optical Characterization of Silicon Nanostructure Arrays by Laser Interference Lithography and Metal-Assisted Chemical Etching

In this paper metal-assisted chemical etching has been applied to pattern porous silicon regions and silicon nanohole arrays in submicron period simply by using positive photoresist as a mask layer. In order to define silicon nanostructures, Metal-assisted chemical etching (MaCE) was carried out with silver catalyst. Provided solution (or materiel) in combination with laser interference lithogr...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • Journal of the Optical Society of America. A, Optics, image science, and vision

دوره 23 9  شماره 

صفحات  -

تاریخ انتشار 2006